RJQ6022DPM

Preliminary Datasheet RJQ6022DPM 600V - 10A - IGBT High Speed Power Switching Features High speed switching Low on-state voltage Built in fast recovery diode in one package R07DS0651EJ0100 Rev.1.00 Jan 23, 2012 Outline PRSS0005ZB-A) (Package name: TO-3PFM) IGBT1 Diode1 1 1. Gate (1) 2. Collector (1) 3. Emitter (1), Collector (2) 4. Emitter (2) 5. Gate (2) 2 IGBT2 Diode2 5 12 34 3 5 4 www.DataSheet.co.kr Absolute Maximum Ratings IGBT1, IGBT2 Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. PW ≤ 5 μs, duty cycle ≤ 1% Symbol VCES / VR VGES IC IC IC(peak) Note1 Tj Tstg Ratings 600 ±30 20 10 40 150 –55 to +150 (Ta = 25°C) Unit V V A A A °C °C Diode1, Diode2 Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Symbol VRM IF IFSM Tj Tstg Ratings 600 10 20 150 –55 to +150 (Ta = 25°C) Unit V A A °C °C R07DS0651EJ0100 Rev.1.00 Jan 23, 2012 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.net/ RJQ6022DPM Preliminary Electrical Characteristics IGBT1, IGBT2 Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Short circuit withstand time Notes: 3. Pulse test. Symbol ICES /IR IGES VGE(off) VCE(sat) VCE(sat) tsc Min — — 5.5 — — — Typ — — ...