RJQ6021DPM

Preliminary Datasheet RJQ6021DPM 600V - 10A - IGBT High Speed Power Switching Features High speed switching Low on-state voltage Built in fast recovery diode in one package R07DS0650EJ0100 Rev.1.00 Jan 23, 2012 Outline RENESAS Package code: PRSS0005ZB-A) (Package name: TO-3PFM) 2 1, 3 1. Anode 2. Cathode 3. Anode, Collector 4. Emitter 5. Gate 5 12 34 5 4 Absolute Maximum Ratings IGBT Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% www.DataSheet.co.kr (Ta = 25°C) Symbol VCES VGES IC IC IC(peak) Tj Tstg Note1 Ratings 600 ±30 20 10 40 150 –55 to +150 Unit V V A A A °C °C Diode Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Symbol VRM IF IFSM Tj Tstg Ratings 600 10 20 150 –55 to +150 (Ta = 25°C) Unit V A A °C °C R07DS0650EJ0100 Rev.1.00 Jan 23, 2012 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.net/ RJQ6021DPM Preliminary Electrical Characteristics IGBT Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Short circuit withstand time Notes: 2. Pulse test. 3. Value at pin 3 to pin 4. Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres tsc Min — — 5.5 — — — — — — Typ —...