Preliminary Datasheet
RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011
Out...
