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RJP60V0DPM

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N-Channel IGBT

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Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter Features  High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Short circuit withstand time (6 s typ.)  Trench gate and thin wafer technology (G6H series) R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Outline REN...


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RJP60V0DPM

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