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RJP60F0DPE

Renesas
Part Number RJP60F0DPE
Manufacturer Renesas
Description N-Channel IGBT
Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate a...
Published May 2, 2012
Datasheet PDF File RJP60F0DPE PDF File


RJP60F0DPE
RJP60F0DPE

Features

 Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)
 Trench gate and thin wafer technology
 High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, induc...


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