Preliminary Datasheet
RJP6065DPM
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010
Outline
RENESAS Package code: PRSS0003ZA-A (Pac...
