RJP30H2DPK-M0

Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tc = 25C www.DataSheet.co.kr (Ta = 25°C) Symbol VCES VGES Ic ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 35 250 60 2.08 150 –55 to +150 Unit V V A A W °C/ W °C °C R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJP30H2DPK-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Min — — 2.5 — — — — — — — — — — — ...