Preliminary Datasheet
RJP30E3DPK-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0352EJ0200 Rev.2.00 Apr 15, 2011
Outline
RENESAS Package code: PRSS0004ZH-A (Pa...
