Preliminary Datasheet
RJL5013DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery diode Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching
R07DS0359EJ0200 (Previous: REJ03G1755-0100) Rev.2.00 Apr 18, 2011
Outline
RENESAS Package code: PRSS0004AE-...
