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RJK6025DPD

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N-Channel Power MOSFET


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Preliminary Datasheet RJK6025DPD 600V - 1A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0676EJ0100 Rev.1.00 Feb 17, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D ...



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RJK6025DPD

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