RJK6013DPP-E0

Preliminary Datasheet RJK6013DPP-E0 600V - 11A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0612EJ0100 Rev.1.00 Feb 20, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW  10 s, duty cycle  1% Value at Tc = 25C STch = 25C, Tch  150C Limited by maximum safe operation area www.DataSheet.co.kr (Ta = 25°C) Symbol VDSS VGSS ID Note4 ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note3 EAR Note3 Pch ch-c Tch Tstg Note2 Ratings 600 30 11 33 11 33 4 0.87 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W C/W C C R07DS0612EJ0100 Rev.1.00 Feb 20, 2012 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK6013DPP-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn...