Preliminary Datasheet
RJK6012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching
R07DS0445EJ0300 (Previous: REJ03G1481-0200) Rev.3.00 Jun 17, 2011
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )...
