RJK2061JPE

Preliminary Datasheet RJK2061JPE Silicon N Channel MOS FET High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 55 mΩ typ. Low input capacitance : Ciss = 1850 pF typ R07DS0369EJ0100 Rev.1.00 May 12, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 2, 4 D 1 2 1 G 3 1. 2. 3. 4. Gate Drain Source Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4. AEC-Q101 compliant www.DataSheet.co.kr (Ta = 25°C) Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note2 EAR Note2 Pch Note3 Tch Note4 Tstg Value 200 ±20 40 160 40 160 15 15 150 175 –55 to +150 Unit V V A A A A A mJ W °C °C Thermal Impedance Characteristics Channel to case thermal impedance θch-c: 1.0°C/W R07DS0369EJ0100 Rev.1.00 May 12, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK2061JPE Preliminary Electrical Characteristics (Ta = 25°C) Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to so...