RJK1560DPP-M0

Preliminary Datasheet RJK1560DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low on-resistance RDS(on) = 0.043  typ. (at ID = 10 A, VGS = 4 V, Ta = 25C)  Low leakage current  High speed switching R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1. Gate 2. Drain 3. Source 1 2 3 S www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAP Note3 EAR Note3 Pch Note2 ch-c Tch Tstg Ratings 150 ±10 20 80 20 80 16 19.2 28.5 4.38 150 –55 to +150 Unit V V A A A A A mJ W C/W C C R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1560DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay ti...