RJK1536DPE

Preliminary Datasheet RJK1536DPE N-Channel Power MOSFET High-Speed Switching Use Features  VDSS : 150 V  RDS(on) : 30 m (Max)  ID : 50 A REJ03G1612-0300 Rev.3.00 Jun 30, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain 2, 4 D 1 1 G 2 3 S 3 Application www.DataSheet.co.kr  Motor control, Lighting control, Solenoid control, DC-DC converter, etc. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Value at Tc = 25C 2. STch = 25C, Tch  150C, L = 100 H Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note2 IAP Pch Note1 ch-c Tch Tstg Ratings 150 ±20 50 100 50 100 25 125 1.0 150 –55 to +150 Unit V V A A A A A W C/W C C REJ03G1612-0300 Rev.3.00 Jun 30, 2010 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1536DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode ...