RJK1535DPJ

Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance  Low leakage current  High speed switching REJ03G0479-0300 Rev.3.00 Jun 30, 2010 Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK1535DPE 3 RJK1535DPF RJK1535DPJ 2 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID www.DataSheet.co.kr ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 150 ±30 40 100 40 100 30 67.5 100 1.25 150 –55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G0479-0300 Rev.3.00 Jun 30, 2010 Page 1 of 7 Datasheet pdf - http://www.DataSheet4U.net/ RJK1535DPJ, RJK1535DPE, RJK1535DPF Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time...