N-Channel Power MOSFET
Preliminary Datasheet
RJK1212DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable ...
Description
Preliminary Datasheet
RJK1212DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free R07DS0092EJ0100 Rev.1.00 Jun 18, 2011
Outline
RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
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S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 120 +12, -5 3 9 3 2 0.34 10 12.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C
R07DS0092EJ0100 Rev.1.00 Jun 18, 2011
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Datasheet pdf - http://www.DataSheet4U.net/
RJK1212DNS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate...
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