RJK1211DPA

Preliminary Datasheet RJK1211DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 10 V) Pb-free Halogen-free R07DS0089EJ0300 Rev.3.00 Apr 11, 2011 Outline RENESAS Package code: PWSN0008DC-B (Package name: WPAK(3)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain www.DataSheet.co.kr S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-c Note3 Tch Tstg Ratings 120 +12, -5 5 15 5 3 0.77 15 8.33 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C R07DS0089EJ0300 Rev.3.00 Apr 11, 2011 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ RJK1211DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gat...