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N1N6 0N WF WFN 1N60
Silicon N-Ch annel MOS FET Cha OSF
Features
■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is pro du ced using...
