Silicon N-Channel MOSFET
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFN1N60
Silicon N-Channel MOSFET
Features
� � � � � 1....
Description
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFN1N60
Silicon N-Channel MOSFET
Features
� � � � � 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state
resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1)
Parameter
Value
600 1.3 0.84 5.0 ±30 78 3.9 5.5 5 0.05 -55~150 300
Units
V A A A V mJ mJ V/ ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient
Value Min
-
Typ
-
Max
25 120
Units
℃/W ℃/W
Rev.A Aug.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Datasheet pdf - http://...
Similar Datasheet