WFU730

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr U730 WF WFU Silicon N-Channel MOSFET Features ■5.5A,400V, RDS(on)(Max 1.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. IPAK Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) (Note 2) (Note 1) (Note 3) (Note1) Parameter Value 400 5.5 2.9 22 ±30 330 7.4 4 48 0.38 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Channel Temperature Thermal Characteristics Symbol RQJC RQJA RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 2.6 50 110 Units ℃/W ℃/W ℃/...