WFU1N60N

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr U1N6 0N WF WFU1N6 U1N60 Silicon N-Ch annel MOS FET Cha OSF Features ■1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM V GS EAS E AR dv/dt PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature 0.24 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) (Note 2) (Note 1) (Note 3) (Note1) 0.62 4.0 ±30 47 3.1 4.5 30 A A V mJ mJ V/ns W Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 600 1.0 Units V A Channel Temperature Thermal Characteristics Symbol R QJC R QCS R QJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Value Min 0.5 - Typ - Max 4.16 105 Units ℃/W ℃/W ℃/W 1 /7 Copyright@Winsemi Mic...