WFSA6503

WFSA6503 N- Channel and P-Channel Silicon MOSFETs Features ■ Low On-resistance. ■ Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package. ■ High-density mounting. ■ RoHS compliant. SOP-8 Applications ■ General-Purpose Switching Device ■ For motor drives, inverters. www.DataSheet.co.kr Absolute Maximum Ratings at Ta=250C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Conditions Drain-Source Voltage Gate-Source Voltage Continuous Drain Current PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm ×0.8mm) 1unit Mounted on a ceramic board (1000mm ×0.8mm) Maximum Temperature Storage Temperature Range Junction 2 2 Ratings N-Ch 30 ±20 6.9 30 1.3 P-Ch -30 ±20 -6 -30 1.3 Unit V V A A W Total Dissipation PT 1.7 1.7 W 0 Channel Temperature Storage Temperature Tch Tstg 150 -55~+150 0 C C Rev.A Feb.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Datasheet pdf - http://www.DataSheet4U.net/ WFSA6503 N-Channel Electrical Characteristics at Ta=250C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge...