TLP2768

Photocouplers GaAℓAs Infrared LED & Photo IC TLP2768 TLP2768 1. Applications Factory Automation (FA) Plasma Display Panels (PDPs) Measuring Instruments 2. General The Toshiba TLP2768 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain, high-speed photodetectors. The TLP2768 guarantees operation at up to 125  and on supplies from 2.7 V to 5.5 V. It is housed in the SDIP6 package. The TLP2768 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of ±20 kV/µs. 3. Features (1) Inverter logic type (open collector output) (2) Package: SDIP6 (3) Operating temperature: -40 to 125  (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 20 MBd (typ.) (NRZ) (6) Threshold input current: 5.0 mA (max) (7) Supply current: 4.0 mA (max) (8) Common-mode transient immunity: ±20 kV/µs (min) (9) Isolation voltage: 5000 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1) : EN62368-1 (Pending) (Note 1) Note 1: When a VDE approved type is needed, please designate the Option (D4). 4. Packaging and Pin Configuration 11-5J1S ©2015-2017 Toshiba Electronic Devices & Storage Corporation 1 1: Anode 2: N.C. 3: Cathode 4: GND 5: VO (Output) 6: VCC Start of commercial production 2011-03 2017-07-27 Rev.7.0 5. Internal Circuit (Note) TLP2768 Note: A 0.1-µF bypass capacitor must be co...