2SC4131 LOW VCE (sat)
Silicon NPN Epitaxial Planar Transistor
Application : DC-DC Converter, Emergency Lighting Invert...
2SC4131 LOW VCE (sat)
Silicon
NPN Epitaxial Planar
Transistor
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
100
V
VCEO VEBO IC IB PC Tj Tstg
50
V
15
V
15(Pulse25)
A
4
A
60(Tc=25°C)
W
150
°C
–55 to +150
°C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=100V VEB=15V IC=25mA VCE=1V, IC=5A IC=5A, IB=80mA IC=5A, IB=80mA VCE=12V, IE=–1A VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
20
4
5
10
–5
0.08
IB2 (A)
–0.08
ton (µs)
0.5typ
(Ta=25°C)
Ratings Unit
10max
µA
10max
µA
50min
V
60 to 360
0.5max
V
1.2max
V
18typ
MHz
210typ
pF
tstg (µs)
2.0typ
tf (µs)
0.4typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2 3.45 ±0.2
0.8±0.2 5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5
Weight : Approx 2.0g
a. Part No.
B C E b. Lot No.
DC Current Gain hFE
Collector Current IC(A)
I C– V CE Characteristics (Typical)
15 85mA 80mA
12
40mA
8
25mA
15mA
4 IB=7mA
0
0
2
4
6
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
1.3
1.0
I C– V BE Temperature Characteristics (Typical)
(VCE=1V) 15
10
Collector Current IC(A)
–30˚C (Case Temp)
Temp...