DATA SHEET
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI ...
DATA SHEET
SILICON
TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR 4 PINS MINI MOLD
DESCRIPTION
The 2SC4092 is an
NPN silicon epitaxial
transistor designed for lownoise amplifier at VHF, UHF band. It is contained in 4 pins mini-mold package which enables high-isolation gain.
PACKAGE DIMENSIONS (Units: mm)
0.4 −0.05 0.4 −0.05 0.4 −0.05 0.16 −0.06
+0.1
2.8 −0.3 +0.2 1.5 −0.1 2 3 4 5° 0 to 0.1 5°
+0.2 +0.1 +0.1
NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA S21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 25 12 3.0 70 200 150 −65 to +150 V V mA mW °C °C
1.1−0.1 0.8
0.6 −0.05
+0.1
V
+0.2
PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Maximum Available Gain SYMBOL ICBO IEBO hFE fT Cob S21e2 NF MAG 9.5 40 6 0.55 12 1.5 14.5 3.0 0.9 MIN. TYP. MAX. 0.1 0.1 200 GHz pF dB dB dB UNIT TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA f = 1.0 GHz VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 5 mA, f =...