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2SC4092

NEC

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI ...


NEC

2SC4092

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Description
DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band. It is contained in 4 pins mini-mold package which enables high-isolation gain. PACKAGE DIMENSIONS (Units: mm) 0.4 −0.05 0.4 −0.05 0.4 −0.05 0.16 −0.06 +0.1 2.8 −0.3 +0.2 1.5 −0.1 2 3 4 5° 0 to 0.1 5° +0.2 +0.1 +0.1 NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA S21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 25 12 3.0 70 200 150 −65 to +150 V V mA mW °C °C 1.1−0.1 0.8 0.6 −0.05 +0.1 V +0.2 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Maximum Available Gain SYMBOL ICBO IEBO hFE fT Cob S21e2 NF MAG 9.5 40 6 0.55 12 1.5 14.5 3.0 0.9 MIN. TYP. MAX. 0.1 0.1 200 GHz pF dB dB dB UNIT TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA f = 1.0 GHz VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 5 mA, f =...




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