2SC4050

2SC4050 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4050 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 120 120 5 100 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 Min 120 120 5 — — 250 — — Typ — — — — — — — — Max — — — 0.1 0.1 800 0.1 1.1 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA*2 I C = 10 mA, IB = 1 mA*2 I C = 10 mA, IB = 1 mA*2 VCE(sat) VBE(sat) V V Notes: 1. The 2SC4050 is grouped by h FE as follows. 2. Pluse test Grade Mark hFE D KID 250 to 500 E KIE 400 to 800 2 2SC4050 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) 8 Typical Output Characteristics 10 18 16 14 6 12 10 4 8 6 2 4 2 µA IB = 0 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 100 50 0 50 100 150 Amb...