SI3317-H

Semiconductor SI3317-H / SI3317-H(B) IRED Features Colorless transparency lens type φ3mm(T-1) all plastic mold type Low power consumption High radiant intensity Applications Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions STRAIGHT TYPE 2.80~3.20 unit : mm STOPPER TYPE : (B) 2.80~3.20 0 5 . 5 ~ 0 1 . 0 5 1 . 3 ~ 0 7 . 2 www.DataSheet.co.kr 0 5 . 5 ~ 0 1 . 0 5 1 . 3 ~ 0 7 . 2 . n i M 0 2 . 1 0 7 . 5 ~ 0 7 . 4 . x a M 0 7 . 0 . x a M 5 4 . 0 . p y T 7 2 . 1 . n i M 0 0 . 3 2 . n i M 0 0 . 1 . p y T 4 5 . 2 0 9 . 3 ~ 0 5 . 3 . n i M 0 0 . 3 . 2x a M 0 7 . 0 . n i M 0 0 . 1 . p y T 4 5 . 2 0 9 . 3 ~ 0 5 . 3 1 2 . x a M 5 4 . 0 1 2 0 0 . 4 ~ 0 6 . 3 0 0 . 4 ~ 0 6 . 3 PIN Connections 1. Anode 2. Cathode KSD-O2B044-000 1 Datasheet pdf - http://www.DataSheet4U.net/ SI3317-H / SI3317-H(B) Absolute Maximum Ratings Characteristic Power dissipation Forward current * Peak forward current Reverse voltage Operating temperature range Storage temperature range 2 1 (Ta=25oC) Symbol PD IF IFP VR Topr Tstg Rating 150 100 1 4 -25∼85 -30∼100 Unit mW mA A V ℃ ℃ * Soldering temperature Tsol 260℃ for 10 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical / Optical Characteristics Characteristic Forward voltage Radiant intensi...