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W11NB80

STMicroelectronics
Part Number W11NB80
Manufacturer STMicroelectronics
Description STW11NB80
Published Apr 15, 2012
Detailed Description ® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE STW 11NB80 s s s s s s V DSS 800 V R DS(on)...
Datasheet PDF File W11NB80 PDF File

W11NB80
W11NB80

Overview
® STW11NB80 N-CHANNEL 800V - 0.
65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE STW 11NB80 s s s s s s V DSS 800 V R DS(on) < 0.
8 Ω ID 11 A TYPICAL RDS(on) = 0.
65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switch...


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