SSE90N06-10P

SSE90N06-10P Elektronische Bauelemente 90 A, 60 V, RDS(ON) 9.9 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. D C TO-220P B R E G A T S TYPICAL APPLICATIONS     Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switch speed. High performance trench technology. F H I J K L X M U P N PRODUCT SUMMARY SSE90N06-10P VDS(V) 60 RDS(on) (m 9.9@VGS= 10V 13@VGS= 4.5V N-Channel D2 www.DataSheet.co.kr O V ID(A) 90 1 Q 1 2 3 Q W Dimensions in millimeters REF. A B C D E F G H J K L M Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 1.60 Typ. 1.10 1.30 1.17 1.37 1.50 REF. N O P Q R S T U V W X Millimeter Min. Max. 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 G1 S3 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Co...