N-Channel Enhancement Mode MosFET
SSE90N04-03P
Elektronische Bauelemente 90A , 40V , RDS(ON) 5 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Produc...
Description
SSE90N04-03P
Elektronische Bauelemente 90A , 40V , RDS(ON) 5 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
D
C
TO-220P
B
R
T
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology.
G
E
A
S
F
H
I
J
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X
M
P
APPLICATION
DC-DC converters and power management such as computers, printers, and power supplies .
Q
N
O
V
Q
W
1 2 3
N-Channel D2
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REF. A B C D E F G H I J K L
G1 S3
Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37
REF. M N O P Q R S T U V W X
Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TC=25°C ID IDM IS TC=25°C PD TJ, TSTG
Ratings
40 ±20 90 240 90 300 -55~175
Unit
V V A A A W °C
Continuous Source Current (Diode Conduction) Power Dissipation
1
Operating Junction and Storage Temperature Range
Thermal Res...
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