AP85T08GS-HF

AP85T08GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 80V 13mΩ 75A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T08GP) are available for low-profile applications. G G D S TO-263(S) D TO-220(P) S Units V V A A A W W/℃ mJ A ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 www.DataSheet.co.kr Rating 80 +20 75 48 260 138 1.11 450 30 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 0.9 40 62 Units ℃/W ℃/W ℃/W 1 201204033 Maximum Thermal Resistance, Junction-ambient Data and specifi...