Ordering number:EN2509C
NPN Triple Diffused Planar Silicon Transistor
2SC3996
Ultrahigh-Definition CRT Display Horizont...
Ordering number:EN2509C
NPN Triple Diffused Planar Silicon
Transistor
2SC3996
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (adoption of HVP process).
· High breakdown voltage (VCBO=1500V). · Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC3996]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
DC Current Gain
Storage Time Fall Time
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 tstg
tf
VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=12A, IB=3.0A IC=12A, IB=3.0A VCE=5V, IC=1.0A VCE=5V, IC=12A IC=8A, IB1=1.6A, IB2=–3.2A IC=8A, IB2=1.6A, IB2=–3.2A
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
Ratings 1500 800 6 15 35 180 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
800
8 4
max 10 1.0
1.0 5
1.5 30
8 3.0 0.2
Unit
µA mA V mA V V
µs µs
Any and all SANYO products described or contained herein do not have specifications that can handle applications t...