2SC3989

Ordering number:EN2556 NPN Triple Diffused Planar Silicon Transistor 2SC3989 500V/25A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3989] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 800 500 7 25 40 8 200 150 –55 to +150 Unit V V V A A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=2.4A VCE=5V, IC=12A VCE=10V, IC=2.4A VCB=10V, f=1MHz 15* 8 18 260 * : The hFE1 of the 2SC3989 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 15 L 30 20 M 40 30 N 50 max 10 10 50* Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control system...