2SC3980

Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 High-speed switching High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 Wide safe operation area Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 / ■ Absolute Maximum Ratings TC = 25°C e e) Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip c e. d typ Collector-base voltage (Emitter open) VCBO 900 V n d stag tinue Collector-emitter voltage (E-B short) VCES 900 V a e cle con Collector-emitter voltage (Base open) VCEO 800 V lifecy , dis Emitter-base voltage (Collector open) VEBO 7 V n u ct ped Base current IB 2 A te tin Produ ed ty Collector current IC 4 A ur tinu Peak collector current ICP 6 A ing fo iscon Collector power PC 70 W in n llow d d dissipation Ta = 25°C 3.0 s fo lane Junction temperature Tj 150 °C a o lude e, p Storage temperature Tstg −55 to +150 °C c tinued incance typ ■ Electrical Characteristics TC = 25°C ± 3°C M is con inten Parameter Symbol Conditions /Dis ma Collector-emitter voltage (Base open) D ance type, Collector-base cutoff current (Emitter open) ten ce Emitter-base cutoff current (Collector open) Main tenan Forward current transfer ratio d main Collector-emitter saturation...