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AON2409 Dataheets PDF



Part Number AON2409
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Datasheet AON2409 DatasheetAON2409 Datasheet (PDF)

AON2409 30V P-Channel MOSFET General Description Product Summary • The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. • RoHS and Halogen-Free Compliant VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) -30V -8A < 32mΩ < 53mΩ Top View DFN 2x2B Bottom View D D S D S Pin 1 D D G Pin 1 G Absolute Maximum Ratings TA=25°C unless.

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AON2409 30V P-Channel MOSFET General Description Product Summary • The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. • RoHS and Halogen-Free Compliant VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) -30V -8A < 32mΩ < 53mΩ Top View DFN 2x2B Bottom View D D S D S Pin 1 D D G Pin 1 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -8 -6.3 -32 2.8 1.8 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Typ 37 66 Max 44 79 D S Units V V A W °C Units °C/W °C/W Rev 2.0 : October 2014 www.aosmd.com Page 1 of 5 AON2409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-8A VGS=-4.5V, ID=-6A Forward Transconductance VDS=-5V, ID=-8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -30 -1.1 -32 -1.75 -1 -5 ±100 -2.3 26.5 32 33.6 41 42 53 20 -0.7 -1 3.5 V µA nA V A mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 530 pF 114 pF 75 pF 11 22 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 14.5 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-8A 6 7.5 nC 1.8 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.8Ω, 5.5 ns tD(off) Turn-Off DelayTime RGEN=3Ω 26.3 ns tf Turn-Off Fall Time 11.5 ns trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/µs 12.2 ns Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs 25.4 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2.0 : October 2014 www.aosmd.com Page 2 of 5 AON2409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS -ID (A) 20 -10V 15 10 -4.5V -4V -6V -3.5V 5 VGS=-3.0V 0 01234 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 -ID(A) 20 VDS=-5V 15 10 125°C 5 25°C 0 012345 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 RDS(ON) (mΩ) 70 60 50 VGS=-4.5V 40 30 20 VGS=-10V 10 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Normalized On-Resistance 1.4 VGS=-10V ID=-8A 1.2 1 VGS=-4.5V ID=-6A 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) RDS(ON) (mΩ) 90 80 ID=-8A 70 60 50 125°C 40 30 25°C 20 10 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage .


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