Document
AON2409
30V P-Channel MOSFET
General Description
Product Summary
• The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
• RoHS and Halogen-Free Compliant
VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V)
-30V -8A < 32mΩ < 53mΩ
Top View
DFN 2x2B
Bottom View
D D S
D
S
Pin 1
D D G
Pin 1
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TA=25°C TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±20 -8 -6.3 -32 2.8 1.8
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t ≤ 10s Steady-State
Symbol RθJA
Typ 37 66
Max 44 79
D
S
Units V V A
W °C
Units °C/W °C/W
Rev 2.0 : October 2014
www.aosmd.com
Page 1 of 5
AON2409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V VDS=-30V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-8A
VGS=-4.5V, ID=-6A
Forward Transconductance
VDS=-5V, ID=-8A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C TJ=125°C
-30
-1.1 -32
-1.75
-1 -5 ±100 -2.3
26.5 32 33.6 41 42 53 20 -0.7 -1
3.5
V
µA
nA V A
mΩ
mΩ S V A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
530 pF 114 pF 75 pF 11 22 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12 14.5 nC
Qg(4.5V) Total Gate Charge Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-8A
6 7.5 nC 1.8 nC
Qgd Gate Drain Charge
3 nC
tD(on)
Turn-On DelayTime
7.7 ns
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=1.8Ω,
5.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
26.3
ns
tf Turn-Off Fall Time
11.5
ns
trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/µs
12.2 ns
Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs
25.4 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2.0 : October 2014
www.aosmd.com
Page 2 of 5
AON2409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-ID (A)
20 -10V
15
10
-4.5V -4V
-6V
-3.5V
5
VGS=-3.0V
0 01234
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
5
-ID(A)
20 VDS=-5V
15
10 125°C
5 25°C
0 012345 -VGS(Volts) Figure 2: Transfer Characteristics (Note E)
6
RDS(ON) (mΩ)
70
60
50 VGS=-4.5V
40
30
20 VGS=-10V
10 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
Normalized On-Resistance
1.4
VGS=-10V ID=-8A 1.2
1
VGS=-4.5V ID=-6A
0.8 0
25 50 75 100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
RDS(ON) (mΩ)
90
80 ID=-8A 70
60
50 125°C
40
30 25°C
20
10 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage .