AON2701

AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AON2701/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AON2701 and AON2701L are electrically identical. -RoHS Compliant -Halogen Free* DFN 2x2 Package A NC D Features VDS (V) = -20V (VGS = -4.5V) ID = -3A RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.45V@1A D A K D G S K Top K G Bottom S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage www.DataSheet.co.kr MOSFET -20 ±8 -3 -2.3 -15 Schottky Units V V A Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM TA=70°C PD TJ, TSTG Symbol RθJA Schottky reverse voltage Continuous Forward CurrentA Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient Thermal Characteristics Schottky Maximum Junction-to-AmbientA Maximum Junction-to-Ambient A A B 20 2.5 1.5 15 1.5 0.95 -55 to 150 Typ 35 65 36 67 1.45 0.92 -55 to 150 Max 45 85 47 87 V A W °C Units °C/W Steady-State t ≤ 10s Steady-State RθJA °C/W Alpha & Omega...