CMKDM8005

CMKDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: C85M SOT-363 CASE APPLICATIONS: Load switch/Level shifting Battery charging Boost switch Electro-luminescent backlighting FEATURES: ESD protection up to 1800V (Human Body Model) 350mW power dissipation Very low rDS(ON) Low threshold voltage Logic level compatible Small, SOT-363 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IS IDM PD TJ, Tstg ΘJA 20 8.0 650 250 1.0 350 -65 to +150 357 UNITS V V mA mA A mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=4.5V, VDS=0 10 IDSS VDS=16V, VGS=0 100 BVDSS VGS=0, ID=250μA 20 VGS(th) VDS=VGS, ID=250μA 0.5 1.0 VSD VGS=0, IS=250mA 1.1 rDS(ON) VGS=4.5V, ID=350mA 0.25 0.36 rDS(ON) VGS=2.5V, ID=300mA 0.37 0.5 rDS(ON) VGS=1.8V, ID=150mA 0.8 gFS VDS=10V, ID=200mA 0.2 Crss VDS=16V, VGS=0, f=1.0MHz...