Power Transistors
2SC3970, 2SC3970A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed swit...
Power
Transistors
2SC3970, 2SC3970A
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s Features
q q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150 –55 to +150 Unit V
16.7±0.3 14.0±0.5
Parameter Collector to base voltage Collector to 2SC3970 2SC3970A 2SC3970
Symbol VCBO VCES VCEO VEBO ICP IC IB
emitter voltage 2SC3970A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V V A A A W ˚C ˚C
Solder Dip
s Absolute Maximum Ratings
4.0
7.5±0.2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
PC Tj Tstg
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3970 2SC3970A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0...