2SC3964
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3964
Switching Applications Solenoid Drive Applications Tempe...
2SC3964
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC3964
Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage
Industrial Applications Unit: mm
High DC current gain: hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 300 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 40 7 2 0.5 1.5 150 −55 to 150
Unit
V V V A A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat)
fT Cob
VCB = 40 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IB = 0, f = 1 MHz
Min Typ. Max Unit
― ― 10 µA
― ― 1 µA
40 ― ―
V
500 ―
―
― 0.3 0.5
V
― ― 1.1 V
― 220 ― MHz
― 20 ― pF
Turn-on time Switching time Storage time
Fall time
ton
20 µs
Input IB1
Output
―
1.0
―
IB1 IB2
100 Ω
tstg IB2
VCC = 3...