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2SC3963

Toshiba Semiconductor
Part Number 2SC3963
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3963 2SC3963 High-Voltage General Amplifier Appli...
Datasheet PDF File 2SC3963 PDF File

2SC3963
2SC3963


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3963 2SC3963 High-Voltage General Amplifier Applications Color TV Class B Sound Output Applications Unit: mm • High voltage: VCEO = 160 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current IC 200 mA Base current IB 100 mA Collector power dissipation PC 1.
5 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significa...



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