DAP222WM

Data Sheet Switching Diode DAP222WM lApplications High frequency switching lDimensions (Unit : mm) 　　lLand size figure (Unit : mm) 1.0 0.5 0.5 lFeatures 1)Ultra small mold type. (EMD3F) 2)High reliability 0.7 0.7 0.7 0.6 0.6 lConstruction Silicon epitaxial planer EMD3 lStructure ROHM : EMD3F dot (year week factory) lTaping dimensions (Unit : mm) www.DataSheet.co.kr lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IFM Forward voltage(repetitive peak) Average rectified forward current Io Isurge Surge current(t=1s) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Limits 80 80 300 100 4 150 150 -55 to +150 Unit V V mA mA A mW C C lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Reverse recovery time IR Ct trr Min. - Typ. - Max. 1.2 0.1 3.5 4 Unit V μA pF ns IF=100mA VR=70V Conditions VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.12 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 1.3 DAP222WM 　 Data Sheet 100 100000 Ta=125°C Ta=150°C 10 FORWARD CURRENT:IF(mA) Ta=150°C Ta=75°C REVERSE CURRENT:IR(nA) 10000 1000 1 Ta=125°C 0.1 Ta=25°C Ta=75°C 100 Ta=25°C 10 0.01 1 0.001 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS...