Silicon Monolithic Integrated Circuit
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◇STRUCTURE ◇PRODUCT ◇PART NUMBER ◇PHYSICAL DIMENSION ◇BLOCK DIAGRAM ◇USE ◇FEATURES
Silicon Monolithic Integrated ...
Description
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◇STRUCTURE ◇PRODUCT ◇PART NUMBER ◇PHYSICAL DIMENSION ◇BLOCK DIAGRAM ◇USE ◇FEATURES
Silicon Monolithic Integrated Circuit 4K×8 bit Electrically Erasable PROM BU9890GUL-W Fig.-1(VCSP50L1) Fig.-2 General purpose ・4K words × 8 bits architecture serial EEPROM ・Wide operating voltage range (1.7V~3.6V) ・Two wire serial interface ・Self-timed write cycle with automatic erase ・32 byte Page Write mode ・Low power consumption。 Write (3.3V) : 0.6mA (Typ.) Read (3.6V) : 0.6mA (Typ.) Standby (3.6V) : 0.1μA (Typ.) ・DATA security Write protect feature (WP pin) Inhibit to WRITE at low VCC ・WLCSP 6pin package ・High reliability fine pattern CMOS technology ・Endurance : 100,000 erase/write cycles ・Data retention : 40 years ・Filtered inputs in SCL・SDA for noise suppression ・Initial data FFh in all address ・Pull-up resistor inputs in SCL・SDA
◇ABSOLUTE MAXIMUM RATING (Ta=25℃ Parameter Supply Voltage Power Dissipation Storage Temperature Operating Temperature Terminal Voltage Symbol
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Rating -0.3~6.5 220 *1 -65~125 -40~85 -0.3~Vcc+1.0 *2
Unit V mW ℃ ℃ V
VCC Pd Tstg Topr -
*1 Degradation is done at 2.2mW/℃(*1) for operation above 25℃ *2 Maximum value of Terminal Voltage is below 6.5V.
◇RECOMMENDED OPERATING CONDITION Parameter Write Supply Voltage Read Input Voltage VIN Vcc 1.7~3.6 0~Vcc
REV. A
Symbol
Rating 2.7~3.3
Unit V V
Datasheet pdf - http://www.DataSheet4U.net/
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◇DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40~85℃、VCC=1.7~3.6V) Parameter “...
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