RCJ450N20

Data Sheet 10V Drive Nch MOSFET RCJ450N20  Structure Silicon N-channel MOSFET r Features o 1) Low on-resistance. f 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. d 5) Parallel use is easy.  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 9.0 13.1 1.0 3.0 1.24 2.54 0.78 0.4 5.08 2.7 (1) (2) (3) 1.2 e  Application d Switching n s  Packaging specifications e n Package Type Code m ig Quantity (pcs) RCJ450N20 Taping TL 1000  m es  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit o Drain-source voltage D Gate-source voltage c Drain current Continuous Pulsed e w Source current (Body Diode) Continuous Pulsed R e Avalanche current Avalanche energy t N Power dissipation Channel temperature o Range of storage temperature VDSS 200 V VGSS 30 V ID *3 45 A IDP *1 180 A IS *3 45 A ISP *1 180 A IAS *2 22.5 A EAS *2 160 mJ PD *4 211 W Tch 150 C Tstg 55 to 150 C *1 Pw10s, Duty cycle1% N*2 L 500H, VDD=50V, RG=25, Tch=25C  Inner circuit ∗1 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case * TC=25°C * Limited only by maximum temperature allowed. Symbol Rth (j-c) * Limits 0.59 Unit C / W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 2019.05 - Rev.C RCJ450N20 Data Sheet  Electrical characteristics (Ta = 25C) Parameter Sym...