RCJ330N25

Data Sheet 10V Drive Nch MOSFET RCJ330N25  Structure Silicon N-channel MOSFET or Features f 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage d VGSS garanteed to be ±30V . 4) High package power.  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 9.0 13.1 1.0 3.0 1.24 2.54 0.78 0.4 5.08 2.7 (1) (2) (3) 1.2 de Application n s Switching e n Packaging specifications m ig Package Type Code s Basic ordering unit (pieces) RCJ330N25 Taping TL 1000   Inner circuit ∗1 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE om e Absolute maximum ratings (Ta  25°C) D Parameter Symbol Limits Unit c Drain-source voltage Gate-source voltage e w Drain current Continuous Pulsed R e Source current (Body Diode) Continuous Pulsed t Avalanche current N Avalanche energy o Power dissipation (Tc=25C) Channel temperature NRange of storage temperature VDSS 250 V VGSS 30 V ID *3 33 A IDP *1 132 A IS *3 26 A ISP *1 104 A IAS *2 16.5 A EAS *2 74.8 mJ PD 211 W Tch 150 C Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed.  Thermal resistance Parameter Channel to Case * TC=25°C Symbol Limits Rth(j-c) * 0.59 Unit C / W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 2016.02 - Rev.B RCJ330N25 　 Data Sheet  Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditio...