N-Channel MOSFET
RCD100N20
Nch 200V 10A Power MOSFET
Datasheet
Outline
VDSS
200V
CPT3
RDS(on) (Max.)
182m
(SC-63)
ID...
Description
RCD100N20
Nch 200V 10A Power MOSFET
Datasheet
Outline
VDSS
200V
CPT3
RDS(on) (Max.)
182m
(SC-63)
ID PD
Features 1) Low on-resistance.
10A 85W
Inner circuit
(1) (2) (3)
for
2) Fast switching speed. 3) Drive circuits can be simple.
d 4) Parallel use is easy. e 5) Pb-free lead plating ; RoHS compliant d 6) 100% Avalanche tested
en ns Application m ig Switching Power Supply
Automotive Motor Drive
s Automotive Solenoid Drive
om De Absolute maximum ratings (Ta = 25°C) c Parameter
Drain - Source voltage
Re w Continuous drain current t e Pulsed drain current
Tc = 25°C Tc = 100°C
o N Gate - Source voltage
NAvalanche energy, single pulse
(1) Gate
(2) Drain
∗1
(3) Source
1 BODY DIODE
(1)
(2)
(3)
Packaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Taping 330 16 2,500 TL
C10N20
Symbol
VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3
Value 200 10 5.4 40 30 7.35
Unit V A A A V mJ
Avalanche current
IAS *3
5.0
A
Power dissipation
Tc = 25°C
PD
Ta = 25°C *4
PD
85
W
0.85
W
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
55 to 150
°C
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1/12
2016.02 - Rev.C
RCD100N20
Data Sheet
Thermal resistance
Parameter
Symbol
Values Unit
Min. Typ. Max.
Thermal resistance, junction - case
RthJC
-
-
1.46 °C/W
Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10...
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