Power MOSFET
0.9NotNeRewcDoemsimgennsded for 5.5 1.5
Data Sheet
1.5 9.5
10V Drive Nch MOSFET
RCD080N25
Structure Silicon N-chann...
Description
0.9NotNeRewcDoemsimgennsded for 5.5 1.5
Data Sheet
1.5 9.5
10V Drive Nch MOSFET
RCD080N25
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)
6.5 5.1
2.3 0.5
0.75
0.9 2.3
(1) (2)
0.65 (3) 2.3
0.8Min. 2.5
0.5 1.0
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RCD080N25
Taping TL
2500
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
VGSS
30
ID *3
8
IDP *1
32
IS *3
8
ISP *1
32
IAS *2
4
EAS *2
4.67
PD *4
85
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Unit V V A A A A A mJ W C C
Thermal resistance
Parameter Channel to Case
Symbol Rth (j-c) *
* TC=25°C * Limited only by maximum channel temperature allowed.
Limits 1.46
Unit C / W
(1) Gate (2) Drain (3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.02 - Rev.B
NotNeRewcDoemsimgennsded for
RCD080N25
Electrical characteri...
Similar Datasheet