2SC3938

Transistors 2SC3938 Silicon NPN epitaxial planar type For high-speed switching Unit: mm (0.425) 0.3+–00..01 ■ Features 3 Low collector-emitter saturation voltage VCE(sat) S-Mini type package, allowing downsizing of the equipment and 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ automatic insertion through the tape packing 1 2 ■ Absolute Maximum Ratings Ta = 25°C (0.65) (0.65) Parameter Symbol Rating Unit 1.3±0.1 /2.0±0.2 Collector-base voltage (Emitter open) VCBO 40 V 10˚ 0.2±0.1 e Collector-emitter voltage (E-B short) VCES 40 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge. ed Collector current IC 100 mA 0 to 0.1 0.9±0.1 0.9–+00..12 le sta ntinu Peak collector current ICP 300 mA a e cyc isco Collector power dissipation PC 150 mW life d, d Junction temperature Tj 150 °C n u duct type Storage temperature Tstg −55 to +150 °C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 2Y te tinwing foudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C in n s follo laned Parameter Symbol Conditions Min a o lude e, p Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 c d inc e typ Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 tinue anc Forward current transfer ratio * hFE VCE = 1 V, IC = 10 mA 60 M is con inten Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA /Dis ma Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = ...