2SC3937

Transistors 2SC3937 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm (0.425) 0.3+–00..01 0.15+–00..0150 ■ Features 3 Low noise figure NF 1.25±0.10 2.1±0.1 5˚ High forward transfer gain S21e2 High transition frequency fT S-Mini type package, allowing downsizing of the equipment 1 2 and automatic insertion through the tape packing and the magazine packing (0.65) (0.65) 1.3±0.1 /2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C 10˚ e e) Parameter Symbol Rating Unit 0.2±0.1 c e. d typ Collector-base voltage (Emitter open) VCBO 15 V n d stag tinue Collector-emitter voltage (Base open) VCEO 10 0 to 0.1 0.9±0.1 0.9–+00..12 V a e cle con Emitter-base voltage (Collector open) VEBO 2 V lifecy , dis Collector current IC 80 mA n u ct ped Collector power dissipation PC 150 mW te tin Produ ed ty Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 2W in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 M is con inten Forward current transfer ratio hFE1 VCE = 8 V, IC = 20 mA /Dis ma hFE2 VCE = 1 V, IC = 3 mA D ance type, Transition frequency fT VCE = 8 V, IC = 20 mA, f = 0.8 G...