Transistors
2SC3937
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
(0.425)
0.3+–00....
Transistors
2SC3937
Silicon
NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
(0.425)
0.3+–00..01
0.15+–00..0150
■ Features 3
Low noise figure NF
1.25±0.10 2.1±0.1 5˚
High forward transfer gain S21e2
High transition frequency fT S-Mini type package, allowing downsizing of the equipment
1
2
and automatic insertion through the tape packing and the magazine packing
(0.65) (0.65) 1.3±0.1
/2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
10˚
e e) Parameter
Symbol Rating
Unit
0.2±0.1
c e. d typ Collector-base voltage (Emitter open) VCBO
15
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
10
0 to 0.1 0.9±0.1 0.9–+00..12
V
a e cle con Emitter-base voltage (Collector open) VEBO
2
V
lifecy , dis Collector current
IC
80
mA
n u ct ped Collector power dissipation
PC
150
mW
te tin Produ ed ty Junction temperature
Tj
150
°C
ur tinu Storage temperature
Tstg −55 to +150 °C
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 2W
in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0
M is con inten Forward current transfer ratio
hFE1 VCE = 8 V, IC = 20 mA
/Dis ma hFE2 VCE = 1 V, IC = 3 mA
D ance type, Transition frequency
fT
VCE = 8 V, IC = 20 mA, f = 0.8 G...