PN2906 PN2907
PN2906A PN2907A
w w w. c e n t r a l s e m i . c o m
PNP SILICON TRANSISTOR
DESCRIPTION: The CENTRAL S...
PN2906 PN2907
PN2906A PN2907A
w w w. c e n t r a l s e m i . c o m
PNP SILICON
TRANSISTOR
DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon
PNP epitaxial planar
transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER
TO-92 CASE
PN2906 PN2907 60 40 PN2906A PN2907A 60 60
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA
5.0 600 625 -65 to +150 200
UNITS V V V mA mW °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) PN2906 PN2907 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 20 ICEV VCE=30V, VEB=0.5V 50 BVCBO IC=10μA 60 BVCEO IC=10mA 40 BVEBO IE=10μA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=500mA, IB=50mA 1.6 VBE(SAT) IC=150mA, IB=15mA 1.3 VBE(SAT) IC=500mA, IB=50mA 2.6 fT VCE=20V, IC=50mA, f=200MHz 200 VCB=10V, IE=0, f=1.0MHz 8.0 Cob Cib VEB=2.0V, IC=0, f=1.0MHz 30 ton VCC=30V, IC=150mA, IB1=15mA 45 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100
www.DataSheet.co.kr
PN2906A PN2907A MIN MAX 10 50 60 60 5.0 0.4 1.6 1.3 2.6 200 8.0 30 45 100
UNITS nA nA V V V V V V V MHz pF pF ns ns
R2 (30-January 2012)
Datasheet pdf - http://www.DataSheet4U.net/
PN2906 PN2907
PN2906A PN2907A
PNP SILICON
TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL hFE hFE hFE hFE hFE hFE...